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SSTD89A
New Product
Vishay Siliconix
N-Channel JFET with Built-In Self-Biased Diodes
PRODUCT SUMMARY
VGS(off) (V)
-0.3 to -1.2
V(BR)DSS Min (V)
-15
gfs Min (mS)
1
IDSS Max (mA)
1.1
FEATURES
D High Gain D Built-In Diodes D VGS(off) Max -1.2 V
BENEFITS
D D D D Full Performance from Low Voltage Power Supply: As Low As 1.2 V Low Signal Loss/System Error High Quality, Low Level Signal Amplification
APPLICATIONS
D D D D D Hearing Aids, Mini Microphones High-Gain/Low-Noise Amplifiers Low-Current/Low-Voltage Battery Powered Amplifiers Infrared Detector Amplifiers Ultra-High Input Impedance Pre-Amplifiers
DESCRIPTION
The SSTD89A n-channel JFET features built-in self-biased diodes and is designed to provide low voltage, low noise and low cut-off voltage. It can be used with power supplies as low as 1.2 V. The SSTD89A is ideal for use in low current amplifier, hearing aid and mini-microphone applications. The SSTD89A is available in the SC-70 (SOT-353), 5-lead package.
SOT-353 SC-70 (5-LEADS)
Diode 1 5 S
2
G
3
4
D
Top View Order Number: SSTD89A
ABSOLUTE MAXIMUM RATINGS (ALL VOLTAGES REFERENCED TO GND = 0 V)
Gate-Drain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -15 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -15 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa SOT-353 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Notes a. Device mounted with all leads soldered or welded to PC board.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 71092 S-02336--Rev. B, 23-Oct-00 www.vishay.com
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SSTD89A
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cut-Off Voltage Saturation Current Operating Current Gate-Reverse Current Drain Cut-Off Currentb Diode Forward Transconductance Gate-Source Forward Voltage V(BR)GSS VGS(off) IDSS ID(op) IGSS ID(off) VF VGS(F) VGS = 0 V, IG = 1 mA VDS = 10 V, ID = 100 nA VDS = 10 V, VGS = 0 V See Figure 1 VGS = 10 V, VDS = 0 V VDS = 15 V, VGS = -5 V IF = 1 mA VDS = 0 V, IG = 1 mA 0.5 10 5 2 0.7 0.7 V -15 -0.3 -21 -1.2 1.1 50 100 pA V mA mA
Symbol
Test Conditions
Min
Typa
Max
Unit
Dynamic
Common-Source Forward Transconductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs Ciss Crss en VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 0 V, f = 1 MHz 0.7 1.5 3.8 2.1 5 pF mS
VDS = 10 V, VGS = 0 V, f = 1 MHz
NV/s qrt (Hz)
Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature.
OPERATING CURRENT TEST CIRCUIT
D
SSTD89A
G
1.2 V
VGS(op) S Internal Diode 22 kW
Figure 1.
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Document Number: 71092 S-02336--Rev. B, 23-Oct-00
SSTD89A
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1000 VGS = 1.0 V 800 I D - Drain Current (mA) I D - Drain Current (mA) 0V 800 1000
Vishay Siliconix
P-CHANNEL
Output Characteristics
VGS = 1.0 V 0V
600 -0.2 V 400 -0.4 V
600 -0.2 V 400
200
200
-0.4 V
0 0.0
0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Diode Characteristics
10,000 1,000 I D - Drain Current (mA) Diode Current ( mA) 1100
Transfer Characteristics
VGS = 1.0 V 900
10
700
0.1
500
0.001 0.00001
300
0.0000001 0.0 0.2 0.4 0.6 0.8 1.0 1.2
100 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7
Diode Voltage (V)
VGS - Gate-to-Source Voltage (V)
Common Source Input Capacitance vs. Gate-Source Voltage
5.1 C rss - Reverse Feedback Capacitance (pF) VDS = 0 V C iss - Input Capacitance (pF) 4.1 VDS = 15 V 4.1
Common Source Reverse Feedback Capacitance vs. Gate-Source Voltage
VDS = 0 V
3.1 VDS = 15 V 2.1
3.1
2.1
1.1
1.1
0.1 0 -3 -6 -9 -12 -15
0.1 0 -3 -6 -9 -12 -15
VGS - Gate Source Voltage (V) Document Number: 71092 S-02336--Rev. B, 23-Oct-00
VGS - Gate Source Voltage (V)
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SSTD89A
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Forward Transconductance vs. Gate-Source Voltage
2.1 g fs - Forward Transconductance (mS) g fs - Forward Transconductance (mS) 1.9 1.7 1.5 1.3 125_C 1.1 25_C 0.9 0.7 0.5 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 4.1 3.6 3.1 2.6 2.1 1.6 1.1 0.6 0.1 0.01 25_C 125_C VGS(off) = -1.0 V VDS = 10 V f = 1 kHz
Forward Transconductance vs. Drain Current
-55_C
0.1 ID - Drain Current (mA)
1
VGS - Gate-to-Source Voltage (V)
Output Conductance vs. Drain Current
3 ( nV / Hz ) VGS(off) = -1.0 V VDS = 10 V f = 1 kHz 40
Equivalent Input Noise Voltage vs. Frequency
g os- Output Conductance ( mS)
2.5
30
2 -55_C
en - Noise Voltage 1
1.5
20
1
25_C
10
0.5 125_C 0 0.01
0 0.1 ID - Drain Current (mA) 10 100 1K f - Frequency (Hz) 10 K 100 K
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4
Document Number: 71092 S-02336--Rev. B, 23-Oct-00

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